NTD4913NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

2.5W

Number of Pins :

4

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

1013pF @ 15V

Turn-Off Delay Time :

14.7 ns

Radiation Hardening :

No

Lead Free :

Lead Free

Pbfree Code :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

SWITCHING

Turn On Delay Time :

10 ns

Terminal Form :

Gull wing

FET Type :

N-Channel

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Avalanche Energy Rating (Eas) :

22 mJ

Fall Time (Typ) :

2.3 ns

Vgs(th) (Max) @ Id :

2.2V @ 250µA

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 day ago)

Published :

2010

Pin Count :

4

DS Breakdown Voltage-Min :

30V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 30A, 10V

Power Dissipation-Max :

1.36W Ta 24W Tc

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

7.7A Ta 32A Tc

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

7.7A

Continuous Drain Current (ID) :

10.5A

Packaging :

Tape and Reel (TR)

Rise Time :

21ns

Terminal Finish :

Tin (Sn)

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

ECCN Code :

EAR99

Terminal Position :

Single