NTD4909NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

ECCN Code :

EAR99

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

5 Weeks

Length :

6.73mm

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Turn-Off Delay Time :

21 ns

Surface Mount :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Published :

2007

Power Dissipation-Max :

1.37W Ta 29.4W Tc

Transistor Application :

SWITCHING

Turn On Delay Time :

11 ns

Drain to Source Breakdown Voltage :

30V

Gate Charge (Qg) (Max) @ Vgs :

17.5nC @ 10V

Vgs (Max) :

±20V

Power Dissipation :

1.37W

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

12.1A

Lead Free :

Lead Free

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Width :

6.22mm

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Height :

2.38mm

Number of Pins :

4

FET Type :

N-Channel

Number of Elements :

1

Avalanche Energy Rating (Eas) :

28 mJ

Terminal Form :

Gull wing

Pin Count :

4

Resistance :

12mOhm

Current - Continuous Drain (Id) @ 25°C :

8.8A Ta 41A Tc

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

1314pF @ 15V

Rds On (Max) @ Id, Vgs :

8m Ω @ 30A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

8.8A