NTD4904N-35G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 30A, 10V

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Lifecycle Status :

LIFETIME (Last Updated: 14 hours ago)

Avalanche Energy Rating (Eas) :

68.4 mJ

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Pbfree Code :

yes

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

30V

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Element Configuration :

Single

Power Dissipation :

52W

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

2 Weeks

RoHS Status :

RoHS Compliant

Drain-source On Resistance-Max :

0.0055Ohm

Pin Count :

3

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Continuous Drain Current (ID) :

79A

Number of Elements :

1

Published :

2010

Input Capacitance (Ciss) (Max) @ Vds :

3052pF @ 15V

Transistor Application :

SWITCHING

Number of Pins :

3

Packaging :

Tube

Power Dissipation-Max :

1.4W Ta 52W Tc

Package / Case :

TO-251-3 Stub Leads, IPak

Current - Continuous Drain (Id) @ 25°C :

13A Ta 79A Tc

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Radiation Hardening :

No

Number of Terminations :

3

Lead Free :

Lead Free

FET Type :

N-Channel

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V