NTD4904N-1G
- Mfr.Part #
- NTD4904N-1G
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 79A SGL IPAK
- Stock
- 10,117
- In Stock :
- 10,117
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSIP-T3
- DS Breakdown Voltage-Min :
- 30 V
- Reach Compliance Code :
- Unknown
- Surface Mount :
- No
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Technology :
- MOSFET (Metal Oxide)
- Avalanche Energy Rating (Eas) :
- 68.4 mJ
- Series :
- -
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 30 V
- Supplier Device Package :
- I-PAK
- Pulsed Drain Current-Max (IDM) :
- 316 A
- Polarity/Channel Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 41 nC @ 10 V
- Terminal Finish :
- MATTE TIN
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Base Product Number :
- NTD49
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 3052 pF @ 15 V
- Number of Elements :
- 1
- Terminal Form :
- THROUGH-HOLE
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.0055 Ω
- FET Feature :
- -
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Terminal Position :
- Single
- Pbfree Code :
- yes
- Package Shape :
- RECTANGULAR
- Number of Terminals :
- 3
- JESD-609 Code :
- e3
- Case Connection :
- DRAIN
- Qualification Status :
- COMMERCIAL
- Rds On (Max) @ Id, Vgs :
- 3.7mOhm @ 30A, 10V
- Package :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 13A (Ta), 79A (Tc)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Product Status :
- Obsolete
- Manufacturer :
- Rochester Electronics LLC
- Datasheets
- NTD4904N-1G

MOSFET (Metal Oxide) N-Channel 3.7mOhm @ 30A, 10V 3052 pF @ 15 V 41 nC @ 10 V 30 V TO-251-3 Short Leads, IPak, TO-251AA
NTD4904N-1G Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 68.4 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3052 pF @ 15 V.Pulsed drain current is maximum rated peak drain current 316 A.A normal operation of the DS requires keeping the breakdown voltage above 30 V.This transistor requires a drain-source voltage (Vdss) of 30 V.
NTD4904N-1G Features
the avalanche energy rating (Eas) is 68.4 mJ
based on its rated peak drain current 316 A.
a 30 V drain to source voltage (Vdss)
NTD4904N-1G Applications
There are a lot of ON Semiconductor
NTD4904N-1G applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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