NTD4865NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

87A

Rds On (Max) @ Id, Vgs :

10.9m Ω @ 30A, 10V

Drain-source On Resistance-Max :

0.0109ohm

Avalanche Energy Rating (Eas) :

50 mJ

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

8.5A Ta 44A Tc

Power Dissipation-Max :

1.27W Ta 33.3W Tc

Drain to Source Voltage (Vdss) :

25V

Case Connection :

DRAIN

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Terminal Position :

Single

Number of Terminations :

2

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

827pF @ 12V

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Qualification Status :

COMMERCIAL

DS Breakdown Voltage-Min :

25V

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Number of Elements :

1

Surface Mount :

yes

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

8.5A

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

10.8nC @ 4.5V

Transistor Element Material :

SILICON

Terminal Finish :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2