NTD4865N-35G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0109ohm

Surface Mount :

No

Packaging :

Tube

Number of Elements :

1

DS Breakdown Voltage-Min :

25V

Drain to Source Voltage (Vdss) :

25V

FET Type :

N-Channel

JESD-609 Code :

e3

Number of Terminations :

3

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

COMMERCIAL

Rds On (Max) @ Id, Vgs :

10.9m Ω @ 30A, 10V

Package / Case :

TO-251-3 Stub Leads, IPak

Input Capacitance (Ciss) (Max) @ Vds :

827pF @ 12V

Avalanche Energy Rating (Eas) :

50 mJ

JESD-30 Code :

R-PSIP-T3

Drain Current-Max (Abs) (ID) :

8.5A

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

87A

Power Dissipation-Max :

1.27W Ta 33.3W Tc

Pin Count :

3

Mounting Type :

Through Hole

Terminal Finish :

Tin

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

8.5A Ta 44A Tc

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

10.8nC @ 4.5V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single