NTD4863NT4G
- Mfr.Part #
- NTD4863NT4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 9.2A/49A DPAK
- Stock
- 33,227
- In Stock :
- 33,227
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 25V
- Drain Current-Max (Abs) (ID) :
- 9.2A
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Qualification Status :
- COMMERCIAL
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 9.2A Ta 49A Tc
- Drain-source On Resistance-Max :
- 0.014Ohm
- Terminal Form :
- Gull wing
- Gate Charge (Qg) (Max) @ Vgs :
- 13.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 990pF @ 12V
- Surface Mount :
- yes
- Terminal Finish :
- Tin
- Pulsed Drain Current-Max (IDM) :
- 98A
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Rds On (Max) @ Id, Vgs :
- 9.3m Ω @ 30A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Terminal Position :
- Single
- JESD-30 Code :
- R-PSSO-G2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Type :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 60.5 mJ
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- Power Dissipation-Max :
- 1.27W Ta 36.6W Tc
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- DS Breakdown Voltage-Min :
- 25V
- Packaging :
- Tape and Reel (TR)
- Datasheets
- NTD4863NT4G

N-Channel Tape & Reel (TR) 9.3m Ω @ 30A, 10V ±20V 990pF @ 12V 13.5nC @ 4.5V 25V TO-252-3, DPak (2 Leads + Tab), SC-63
NTD4863NT4G Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 60.5 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 990pF @ 12V.9.2A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 98A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 25V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
NTD4863NT4G Features
the avalanche energy rating (Eas) is 60.5 mJ
based on its rated peak drain current 98A.
a 25V drain to source voltage (Vdss)
NTD4863NT4G Applications
There are a lot of Rochester Electronics, LLC
NTD4863NT4G applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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