NTD4863NA-35G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2010

Terminal Finish :

Tin (Sn)

Drain to Source Voltage (Vdss) :

25V

Package / Case :

TO-251-3 Stub Leads, IPak

Continuous Drain Current (ID) :

11.3mA

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

9.2A

Mounting Type :

Through Hole

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

17.8nC @ 10V

Number of Elements :

1

Power Dissipation-Max :

1.27W Ta 36.6W Tc

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

990pF @ 12V

Avalanche Energy Rating (Eas) :

60.5 mJ

FET Type :

N-Channel

Transistor Application :

SWITCHING

Element Configuration :

Single

DS Breakdown Voltage-Min :

25V

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

9.3m Ω @ 30A, 10V

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

9.2A Ta 49A Tc

JESD-609 Code :

e3

Number of Pins :

3

Power Dissipation :

1.95W

Surface Mount :

No

Operating Temperature :

-55°C~175°C TJ

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

98A