NTD4860NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

10.4A Ta 65A Tc

Lead Free :

Lead Free

Fall Time (Typ) :

2.3 ns

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Published :

2007

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn-Off Delay Time :

22 ns

Input Capacitance (Ciss) (Max) @ Vds :

1308pF @ 12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

16.5nC @ 4.5V

Drain Current-Max (Abs) (ID) :

65A

Terminal Form :

Gull wing

Rise Time :

17ns

Pbfree Code :

yes

Pin Count :

4

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

12.6A

Drain to Source Breakdown Voltage :

25V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Terminal Finish :

Tin (Sn)

Number of Pins :

4

Surface Mount :

yes

FET Type :

N-Channel

Transistor Element Material :

SILICON

Power Dissipation :

2W

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

17 Weeks

Number of Terminations :

2

Power Dissipation-Max :

1.28W Ta 50W Tc

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 30A, 10V

Transistor Application :

SWITCHING

Number of Elements :

1