NTD4858NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

11.2A Ta 73A Tc

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

19.2nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1563pF @ 12V

Power Dissipation :

2W

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

8 Weeks

Transistor Element Material :

SILICON

Rise Time :

17.3ns

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Continuous Drain Current (ID) :

13.6A

FET Type :

N-Channel

Turn On Delay Time :

12.6 ns

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

73A

Packaging :

Tape and Reel (TR)

Height :

2.38mm

Resistance :

6.2mOhm

Drain to Source Breakdown Voltage :

25V

Pin Count :

4

ECCN Code :

EAR99

Case Connection :

DRAIN

JESD-609 Code :

e3

Element Configuration :

Single

Number of Pins :

4

Turn-Off Delay Time :

23.8 ns

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

6.73mm

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

6.2m Ω @ 30A, 10V

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Published :

2007

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Terminal Form :

Gull wing

Number of Terminations :

2

Terminal Finish :

Tin (Sn)

Width :

6.22mm

Power Dissipation-Max :

1.3W Ta 54.5W Tc

Fall Time (Typ) :

2.8 ns