NTD4858N-35G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

6.2m Ω @ 30A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Power Dissipation :

2W

Pbfree Code :

yes

Published :

2007

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Continuous Drain Current (ID) :

13.6A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

4 Weeks

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

19.2nC @ 4.5V

Packaging :

Tube

FET Type :

N-Channel

Number of Elements :

1

Radiation Hardening :

No

Lead Free :

Lead Free

Package / Case :

TO-251-3 Stub Leads, IPak

Input Capacitance (Ciss) (Max) @ Vds :

1563pF @ 12V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

17.3ns

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

11.2A Ta 73A Tc

Mounting Type :

Through Hole

Power Dissipation-Max :

1.3W Ta 54.5W Tc

Turn-Off Delay Time :

23.8 ns

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Case Connection :

DRAIN

Number of Pins :

3

Fall Time (Typ) :

2.8 ns

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

25V

Number of Terminations :

3