NTD4857N-35G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Element Configuration :

Single

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

144.5 mJ

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Rise Time :

18.7ns

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Mounting Type :

Through Hole

Pin Count :

3

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Transistor Element Material :

SILICON

Published :

2007

Drain to Source Breakdown Voltage :

25V

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 30A, 10V

Pulsed Drain Current-Max (IDM) :

156A

RoHS Status :

RoHS Compliant

Continuous Drain Current (ID) :

14.6A

Current - Continuous Drain (Id) @ 25°C :

12A Ta 78A Tc

Mount :

Through Hole

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Package / Case :

TO-251-3 Stub Leads, IPak

Input Capacitance (Ciss) (Max) @ Vds :

1960pF @ 12V

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

3.6 ns

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Turn-Off Delay Time :

26 ns

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

2.1W

Drain Current-Max (Abs) (ID) :

12A

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Drain-source On Resistance-Max :

0.008Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 4.5V

Pbfree Code :

yes

Number of Pins :

3

Power Dissipation-Max :

1.31W Ta 56.6W Tc