NTD4856N-1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

COMMERCIAL

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

180.5 mJ

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

13.3A

Mounting Type :

Through Hole

Number of Elements :

1

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2.5V @ 250μA

DS Breakdown Voltage-Min :

25V

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 4.5V

Transistor Element Material :

SILICON

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

13.3A Ta 89A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 30A, 10V

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Drain to Source Voltage (Vdss) :

25V

Drain-source On Resistance-Max :

0.0068Ohm

Power Dissipation-Max :

1.33W Ta 60W Tc

Terminal Position :

Single

JESD-30 Code :

R-PSIP-T3

Input Capacitance (Ciss) (Max) @ Vds :

2.241pF @ 12V

Surface Mount :

No

Number of Terminations :

3

Terminal Finish :

Tin

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

179A

JESD-609 Code :

e3