NTD4855NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

32.7nC @ 4.5V

Case Connection :

DRAIN

Terminal Form :

Gull wing

Reach Compliance Code :

Unknown

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

DS Breakdown Voltage-Min :

25V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Position :

Single

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Number of Terminations :

2

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

2.95pF @ 12V

Drain to Source Voltage (Vdss) :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

4.3m Ω @ 30A, 10V

Current - Continuous Drain (Id) @ 25°C :

14A Ta 98A Tc

Avalanche Energy Rating (Eas) :

220 mJ

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

1.35W Ta 66.7W Tc

Drain-source On Resistance-Max :

0.006Ohm

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

14A

Qualification Status :

COMMERCIAL

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

197A

Number of Elements :

1