NTD4854NT4G
- Mfr.Part #
- NTD4854NT4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 15.7A/128A DPAK
- Stock
- 22,431
- In Stock :
- 22,431
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 4.6pF @ 12V
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 15.7A Ta 128A Tc
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 3.6m Ω @ 30A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSSO-G2
- Pulsed Drain Current-Max (IDM) :
- 225A
- Number of Terminations :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~175°C TJ
- FET Type :
- N-Channel
- Qualification Status :
- COMMERCIAL
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- MATTE TIN
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 49.2nC @ 4.5V
- Drain-source On Resistance-Max :
- 0.0047Ohm
- Reach Compliance Code :
- Unknown
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 1.43W Ta 93.75W Tc
- Drain to Source Voltage (Vdss) :
- 25V
- Pin Count :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Surface Mount :
- yes
- RoHS Status :
- ROHS3 Compliant
- Avalanche Energy Rating (Eas) :
- 338 mJ
- DS Breakdown Voltage-Min :
- 25V
- Drain Current-Max (Abs) (ID) :
- 15.7A
- Terminal Position :
- Single
- Datasheets
- NTD4854NT4G

N-Channel Tape & Reel (TR) 3.6m Ω @ 30A, 10V ±20V 4.6pF @ 12V 49.2nC @ 4.5V 25V TO-252-3, DPak (2 Leads + Tab), SC-63
NTD4854NT4G Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 338 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4.6pF @ 12V.A device's drain current is its maximum continuous current, and this device's drain current is 15.7A.A maximum pulsed drain current of 225A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 25V.In order to operate this transistor, a voltage of 25V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
NTD4854NT4G Features
the avalanche energy rating (Eas) is 338 mJ
based on its rated peak drain current 225A.
a 25V drain to source voltage (Vdss)
NTD4854NT4G Applications
There are a lot of Rochester Electronics, LLC
NTD4854NT4G applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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