NTD4854NT4G

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Mfr.Part #
NTD4854NT4G
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 25V 15.7A/128A DPAK
Stock
22,431
In Stock :
22,431

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Case Connection :
DRAIN
Input Capacitance (Ciss) (Max) @ Vds :
4.6pF @ 12V
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
15.7A Ta 128A Tc
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
3.6m Ω @ 30A, 10V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Number of Elements :
1
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
JESD-30 Code :
R-PSSO-G2
Pulsed Drain Current-Max (IDM) :
225A
Number of Terminations :
2
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±20V
Operating Temperature :
-55°C~175°C TJ
FET Type :
N-Channel
Qualification Status :
COMMERCIAL
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Finish :
MATTE TIN
Mounting Type :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
49.2nC @ 4.5V
Drain-source On Resistance-Max :
0.0047Ohm
Reach Compliance Code :
Unknown
Terminal Form :
Gull wing
JESD-609 Code :
e3
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Pbfree Code :
yes
Power Dissipation-Max :
1.43W Ta 93.75W Tc
Drain to Source Voltage (Vdss) :
25V
Pin Count :
3
Configuration :
SINGLE WITH BUILT-IN DIODE
Surface Mount :
yes
RoHS Status :
ROHS3 Compliant
Avalanche Energy Rating (Eas) :
338 mJ
DS Breakdown Voltage-Min :
25V
Drain Current-Max (Abs) (ID) :
15.7A
Terminal Position :
Single
Datasheets
NTD4854NT4G
Introducing Transistors - FETs, MOSFETs - Single onsemi NTD4854NT4G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, NTD4854NT4G pinout, NTD4854NT4G datasheet PDF, NTD4854NT4G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTD4854NT4G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTD4854NT4G


N-Channel Tape & Reel (TR) 3.6m Ω @ 30A, 10V ±20V 4.6pF @ 12V 49.2nC @ 4.5V 25V TO-252-3, DPak (2 Leads + Tab), SC-63

NTD4854NT4G Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 338 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4.6pF @ 12V.A device's drain current is its maximum continuous current, and this device's drain current is 15.7A.A maximum pulsed drain current of 225A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 25V.In order to operate this transistor, a voltage of 25V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

NTD4854NT4G Features


the avalanche energy rating (Eas) is 338 mJ
based on its rated peak drain current 225A.
a 25V drain to source voltage (Vdss)


NTD4854NT4G Applications


There are a lot of Rochester Electronics, LLC
NTD4854NT4G applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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