NTD4815NHT4G
- Mfr.Part #
- NTD4815NHT4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 6.9A/35A DPAK
- Stock
- 59,818
- In Stock :
- 59,818
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 1.26W Ta 32.6W Tc
- Qualification Status :
- COMMERCIAL
- Drain-source On Resistance-Max :
- 0.015Ohm
- Terminal Finish :
- MATTE TIN
- Drain Current-Max (Abs) (ID) :
- 6.9A
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 11.5V
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DS Breakdown Voltage-Min :
- 30V
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 30A, 10V
- Drain to Source Voltage (Vdss) :
- 30V
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- JESD-609 Code :
- e3
- Avalanche Energy Rating (Eas) :
- 35.6 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 6.9A Ta 35A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 845pF @ 12V
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 6.8nC @ 4.5V
- Packaging :
- Tape and Reel (TR)
- Pulsed Drain Current-Max (IDM) :
- 87A
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSSO-G2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Surface Mount :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Reach Compliance Code :
- Unknown
- Terminal Position :
- Single
- FET Type :
- N-Channel
- Terminal Form :
- Gull wing
- Datasheets
- NTD4815NHT4G

N-Channel Tape & Reel (TR) 15m Ω @ 30A, 10V ±20V 845pF @ 12V 6.8nC @ 4.5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
NTD4815NHT4G Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 35.6 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 845pF @ 12V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 6.9A.Peak drain current is 87A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 30V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 11.5V), this device contributes to a reduction in overall power consumption.
NTD4815NHT4G Features
the avalanche energy rating (Eas) is 35.6 mJ
based on its rated peak drain current 87A.
a 30V drain to source voltage (Vdss)
NTD4815NHT4G Applications
There are a lot of Rochester Electronics, LLC
NTD4815NHT4G applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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