NTD4815NHT4G

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Mfr.Part #
NTD4815NHT4G
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 30V 6.9A/35A DPAK
Stock
59,818
In Stock :
59,818

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation-Max :
1.26W Ta 32.6W Tc
Qualification Status :
COMMERCIAL
Drain-source On Resistance-Max :
0.015Ohm
Terminal Finish :
MATTE TIN
Drain Current-Max (Abs) (ID) :
6.9A
Mounting Type :
Surface Mount
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 11.5V
Case Connection :
DRAIN
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DS Breakdown Voltage-Min :
30V
Operating Temperature :
-55°C~175°C TJ
Rds On (Max) @ Id, Vgs :
15m Ω @ 30A, 10V
Drain to Source Voltage (Vdss) :
30V
Pbfree Code :
yes
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
2.5V @ 250μA
JESD-609 Code :
e3
Avalanche Energy Rating (Eas) :
35.6 mJ
Current - Continuous Drain (Id) @ 25°C :
6.9A Ta 35A Tc
Input Capacitance (Ciss) (Max) @ Vds :
845pF @ 12V
Pin Count :
3
Gate Charge (Qg) (Max) @ Vgs :
6.8nC @ 4.5V
Packaging :
Tape and Reel (TR)
Pulsed Drain Current-Max (IDM) :
87A
Transistor Element Material :
SILICON
JESD-30 Code :
R-PSSO-G2
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Terminations :
2
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount :
yes
Operating Mode :
ENHANCEMENT MODE
Reach Compliance Code :
Unknown
Terminal Position :
Single
FET Type :
N-Channel
Terminal Form :
Gull wing
Datasheets
NTD4815NHT4G
Introducing Transistors - FETs, MOSFETs - Single onsemi NTD4815NHT4G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, NTD4815NHT4G pinout, NTD4815NHT4G datasheet PDF, NTD4815NHT4G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTD4815NHT4G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTD4815NHT4G


N-Channel Tape & Reel (TR) 15m Ω @ 30A, 10V ±20V 845pF @ 12V 6.8nC @ 4.5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63

NTD4815NHT4G Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 35.6 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 845pF @ 12V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 6.9A.Peak drain current is 87A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 30V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 11.5V), this device contributes to a reduction in overall power consumption.

NTD4815NHT4G Features


the avalanche energy rating (Eas) is 35.6 mJ
based on its rated peak drain current 87A.
a 30V drain to source voltage (Vdss)


NTD4815NHT4G Applications


There are a lot of Rochester Electronics, LLC
NTD4815NHT4G applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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