NTD4815N-35G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

ECCN Code :

EAR99

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Turn-Off Delay Time :

11.4 ns

REACH SVHC :

No SVHC

Dual Supply Voltage :

30V

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

6.9A Ta 35A Tc

Pin Count :

3

Current Rating :

35A

Gate Charge (Qg) (Max) @ Vgs :

14.1nC @ 11.5V

Drain to Source Breakdown Voltage :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 11.5V

Drain Current-Max (Abs) (ID) :

6.9A

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Threshold Voltage :

1.5V

Factory Lead Time :

2 Weeks

Continuous Drain Current (ID) :

35A

Width :

7.49mm

Nominal Vgs :

2.5 V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Length :

6.73mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn On Delay Time :

10.5 ns

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

770pF @ 12V

Packaging :

Tube

Drain-source On Resistance-Max :

0.025Ohm

Rds On (Max) @ Id, Vgs :

15m Ω @ 30A, 10V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

1.26W Ta 32.6W Tc

Qualification Status :

Not Qualified

Package / Case :

TO-251-3 Stub Leads, IPak

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

60.5 mJ

Published :

2008

Termination :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Height :

2.38mm

Rise Time :

21.4ns

Vgs (Max) :

±20V

Number of Pins :

3

Voltage - Rated DC :

30V

Power Dissipation :

32.6W

Surface Mount :

No

Mounting Type :

Through Hole

Element Configuration :

Single

Fall Time (Typ) :

21.4 ns

Transistor Element Material :

SILICON

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

87A