NTD4813NHT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Surface Mount :

yes

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Power Dissipation :

1.94W

Current - Continuous Drain (Id) @ 25°C :

7.6A Ta 40A Tc

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 2 hours ago)

Element Configuration :

Single

Rise Time :

16.1ns

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

90A

Drain-source On Resistance-Max :

0.0259ohm

Fall Time (Typ) :

16.1 ns

JESD-609 Code :

e3

Turn-Off Delay Time :

17.2 ns

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Factory Lead Time :

2 Weeks

Power Dissipation-Max :

1.27W Ta 35.3W Tc

Case Connection :

DRAIN

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

30V

RoHS Status :

ROHS3 Compliant

Pin Count :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 11.5V

Number of Pins :

4

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

13m Ω @ 30A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

940pF @ 12V

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

9A

JESD-30 Code :

R-PSSO-G2

Radiation Hardening :

No

Published :

2008