NTD4809NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Length :

6.73mm

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1456pF @ 12V

Drain to Source Breakdown Voltage :

30V

Pbfree Code :

yes

Power Dissipation :

2W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 11.5V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Elements :

1

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Resistance :

9mOhm

Width :

6.22mm

Lead Free :

Lead Free

Pin Count :

4

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

9m Ω @ 30A, 10V

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

25.3 ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 11.5V

Element Configuration :

Single

Turn On Delay Time :

12.3 ns

Case Connection :

DRAIN

Factory Lead Time :

4 Weeks

Drain Current-Max (Abs) (ID) :

9A

Height :

2.38mm

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Rise Time :

22.7ns

Number of Terminations :

2

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

9.6A Ta 58A Tc

Gate to Source Voltage (Vgs) :

20V

Contact Plating :

Tin

ECCN Code :

EAR99

Terminal Form :

Gull wing

Published :

2007

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Continuous Drain Current (ID) :

58A

FET Type :

N-Channel

Power Dissipation-Max :

1.4W Ta 52W Tc

Fall Time (Typ) :

2.8 ns

Number of Pins :

4