NTD4805NT4G
- Mfr.Part #
- NTD4805NT4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 12.7A/95A DPAK
- Stock
- 7,171
- In Stock :
- 7,171
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 9 Weeks
- Power Dissipation :
- 2.24W
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Terminal Form :
- Gull wing
- Current - Continuous Drain (Id) @ 25°C :
- 12.7A Ta 95A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 48nC @ 11.5V
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Width :
- 6.22mm
- Avalanche Energy Rating (Eas) :
- 288 mJ
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Published :
- 2008
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 1.41W Ta 79W Tc
- Terminal Finish :
- Tin (Sn)
- Fall Time (Typ) :
- 8 ns
- JESD-30 Code :
- R-PSSO-G2
- Rise Time :
- 20.3ns
- Drain to Source Breakdown Voltage :
- 30V
- Number of Terminations :
- 2
- FET Type :
- N-Channel
- Turn On Delay Time :
- 17.2 ns
- Pin Count :
- 4
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Height :
- 2.38mm
- Length :
- 6.73mm
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 88A
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 11.5V
- Operating Temperature :
- -55°C~175°C TJ
- Turn-Off Delay Time :
- 20.8 ns
- Transistor Application :
- SWITCHING
- Drain Current-Max (Abs) (ID) :
- 95A
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 30A, 10V
- Transistor Element Material :
- SILICON
- Resistance :
- 5mOhm
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Number of Pins :
- 4
- Input Capacitance (Ciss) (Max) @ Vds :
- 2865pF @ 12V
- Datasheets
- NTD4805NT4G

N-Channel Tape & Reel (TR) 5m Ω @ 30A, 10V ±20V 2865pF @ 12V 48nC @ 11.5V TO-252-3, DPak (2 Leads + Tab), SC-63
NTD4805NT4G Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 288 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2865pF @ 12V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 88A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.A device can conduct a maximum continuous current of [95A] according to its drain current.It is [20.8 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 17.2 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 11.5V).
NTD4805NT4G Features
the avalanche energy rating (Eas) is 288 mJ
a continuous drain current (ID) of 88A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 20.8 ns
NTD4805NT4G Applications
There are a lot of ON Semiconductor
NTD4805NT4G applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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