NTB45N06T4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

60V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Published :

2001

Power Dissipation-Max :

2.4W Ta 125W Tj

Radiation Hardening :

No

Turn On Delay Time :

10 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

Number of Terminations :

2

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Voltage - Rated DC :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Height :

11.05mm

Current Rating :

45A

Fall Time (Typ) :

106 ns

Factory Lead Time :

8 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Length :

10.29mm

Rds On (Max) @ Id, Vgs :

26m Ω @ 22.5A, 10V

Element Configuration :

Single

Contact Plating :

Tin

Width :

4.83mm

Turn-Off Delay Time :

33 ns

RoHS Status :

ROHS3 Compliant

Resistance :

26mOhm

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

45A

Avalanche Energy Rating (Eas) :

240 mJ

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

1725pF @ 25V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

45A Ta

JESD-609 Code :

e3

Rise Time :

101ns

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

Threshold Voltage :

2.8V

Power Dissipation :

125W

ECCN Code :

EAR99

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Pin Count :

3