NTB45N06G

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Mfr.Part #
NTB45N06G
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 60V 45A D2PAK
Stock
8,462
In Stock :
8,462

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Case Connection :
DRAIN
Number of Elements :
1
Gate to Source Voltage (Vgs) :
20V
Gate Charge (Qg) (Max) @ Vgs :
46nC @ 10V
Drain to Source Breakdown Voltage :
60V
Rds On (Max) @ Id, Vgs :
26m Ω @ 22.5A, 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rise Time :
101ns
Vgs (Max) :
±20V
Terminal Form :
Gull wing
Mount :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Current Rating :
45A
Power Dissipation-Max :
2.4W Ta 125W Tj
RoHS Status :
RoHS Compliant
Pin Count :
3
Input Capacitance (Ciss) (Max) @ Vds :
1725pF @ 25V
Voltage - Rated DC :
60V
Current - Continuous Drain (Id) @ 25°C :
45A Ta
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FET Type :
N-Channel
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 3 days ago)
Pbfree Code :
yes
Transistor Element Material :
SILICON
Power Dissipation :
125W
Drive Voltage (Max Rds On,Min Rds On) :
10V
Qualification Status :
Not Qualified
Number of Terminations :
2
Lead Free :
Lead Free
Continuous Drain Current (ID) :
45A
JESD-30 Code :
R-PSSO-G2
Drain-source On Resistance-Max :
0.026ohm
Vgs(th) (Max) @ Id :
4V @ 250µA
Fall Time (Typ) :
106 ns
Terminal Finish :
Tin (Sn)
Transistor Application :
SWITCHING
Packaging :
Tube
Operating Temperature :
-55°C~175°C TJ
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JESD-609 Code :
e3
Number of Pins :
3
Avalanche Energy Rating (Eas) :
240 mJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
Turn-Off Delay Time :
33 ns
Published :
2005
Datasheets
NTB45N06G
Introducing Transistors - FETs, MOSFETs - Single onsemi NTB45N06G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Mounting Type:Surface Mount, NTB45N06G pinout, NTB45N06G datasheet PDF, NTB45N06G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTB45N06G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTB45N06G


N-Channel Tube 26m Ω @ 22.5A, 10V ±20V 1725pF @ 25V 46nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

NTB45N06G Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 240 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1725pF @ 25V.This device has a continuous drain current (ID) of [45A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 33 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).

NTB45N06G Features


the avalanche energy rating (Eas) is 240 mJ
a continuous drain current (ID) of 45A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 33 ns


NTB45N06G Applications


There are a lot of ON Semiconductor
NTB45N06G applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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