NTB45N06G
- Mfr.Part #
- NTB45N06G
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 45A D2PAK
- Stock
- 8,462
- In Stock :
- 8,462
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Packaging :
- Tube
- Vgs (Max) :
- ±20V
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 101ns
- Power Dissipation :
- 125W
- Drain to Source Breakdown Voltage :
- 60V
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Current Rating :
- 45A
- Published :
- 2005
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Pin Count :
- 3
- Voltage - Rated DC :
- 60V
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 45A Ta
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 2.4W Ta 125W Tj
- Operating Temperature :
- -55°C~175°C TJ
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- JESD-30 Code :
- R-PSSO-G2
- Continuous Drain Current (ID) :
- 45A
- RoHS Status :
- RoHS Compliant
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 26m Ω @ 22.5A, 10V
- Case Connection :
- DRAIN
- Number of Terminations :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 33 ns
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1725pF @ 25V
- Drain-source On Resistance-Max :
- 0.026ohm
- Avalanche Energy Rating (Eas) :
- 240 mJ
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 106 ns
- Datasheets
- NTB45N06G
NTB45N06G Documents

N-Channel Tube 26m Ω @ 22.5A, 10V ±20V 1725pF @ 25V 46nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB45N06G Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 240 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1725pF @ 25V.This device has a continuous drain current (ID) of [45A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 33 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).
NTB45N06G Features
the avalanche energy rating (Eas) is 240 mJ
a continuous drain current (ID) of 45A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 33 ns
NTB45N06G Applications
There are a lot of ON Semiconductor
NTB45N06G applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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