NTB45N06G
- Mfr.Part #
- NTB45N06G
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 45A D2PAK
- Stock
- 8,462
- In Stock :
- 8,462
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Drain to Source Breakdown Voltage :
- 60V
- Rds On (Max) @ Id, Vgs :
- 26m Ω @ 22.5A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rise Time :
- 101ns
- Vgs (Max) :
- ±20V
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Current Rating :
- 45A
- Power Dissipation-Max :
- 2.4W Ta 125W Tj
- RoHS Status :
- RoHS Compliant
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1725pF @ 25V
- Voltage - Rated DC :
- 60V
- Current - Continuous Drain (Id) @ 25°C :
- 45A Ta
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- FET Type :
- N-Channel
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 125W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 2
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 45A
- JESD-30 Code :
- R-PSSO-G2
- Drain-source On Resistance-Max :
- 0.026ohm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Fall Time (Typ) :
- 106 ns
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Operating Temperature :
- -55°C~175°C TJ
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Avalanche Energy Rating (Eas) :
- 240 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 33 ns
- Published :
- 2005
- Datasheets
- NTB45N06G

N-Channel Tube 26m Ω @ 22.5A, 10V ±20V 1725pF @ 25V 46nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB45N06G Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 240 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1725pF @ 25V.This device has a continuous drain current (ID) of [45A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 33 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).
NTB45N06G Features
the avalanche energy rating (Eas) is 240 mJ
a continuous drain current (ID) of 45A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 33 ns
NTB45N06G Applications
There are a lot of ON Semiconductor
NTB45N06G applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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