NTB45N06G

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Mfr.Part #
NTB45N06G
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 60V 45A D2PAK
Stock
8,462
In Stock :
8,462

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification Status :
Not Qualified
Published :
2005
Transistor Application :
SWITCHING
Element Configuration :
Single
Continuous Drain Current (ID) :
45A
RoHS Status :
RoHS Compliant
Packaging :
Tube
Transistor Element Material :
SILICON
Rise Time :
101ns
Pin Count :
3
Number of Pins :
3
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Case Connection :
DRAIN
Gate Charge (Qg) (Max) @ Vgs :
46nC @ 10V
Operating Temperature :
-55°C~175°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
4V @ 250µA
Terminal Form :
Gull wing
JESD-30 Code :
R-PSSO-G2
Fall Time (Typ) :
106 ns
Drain to Source Breakdown Voltage :
60V
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 3 days ago)
Mount :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
45A Ta
Terminal Finish :
Tin (Sn)
Input Capacitance (Ciss) (Max) @ Vds :
1725pF @ 25V
Operating Mode :
ENHANCEMENT MODE
Lead Free :
Lead Free
Mounting Type :
Surface Mount
Number of Terminations :
2
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current Rating :
45A
Rds On (Max) @ Id, Vgs :
26m Ω @ 22.5A, 10V
Voltage - Rated DC :
60V
Number of Elements :
1
Vgs (Max) :
±20V
Pbfree Code :
yes
Gate to Source Voltage (Vgs) :
20V
Avalanche Energy Rating (Eas) :
240 mJ
JESD-609 Code :
e3
Turn-Off Delay Time :
33 ns
Power Dissipation-Max :
2.4W Ta 125W Tj
Power Dissipation :
125W
Drain-source On Resistance-Max :
0.026ohm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Introducing Transistors - FETs, MOSFETs - Single onsemi NTB45N06G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Number of Terminations:2, NTB45N06G pinout, NTB45N06G datasheet PDF, NTB45N06G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTB45N06G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTB45N06G


N-Channel Tube 26m Ω @ 22.5A, 10V ±20V 1725pF @ 25V 46nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

NTB45N06G Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 240 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1725pF @ 25V.This device has a continuous drain current (ID) of [45A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 33 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).

NTB45N06G Features


the avalanche energy rating (Eas) is 240 mJ
a continuous drain current (ID) of 45A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 33 ns


NTB45N06G Applications


There are a lot of ON Semiconductor
NTB45N06G applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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