NTB45N06LT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

4.83mm

Rise Time :

341ns

Turn On Delay Time :

13 ns

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

125W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

5V

Published :

2005

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

Terminal Form :

Gull wing

Lead Free :

Lead Free

Element Configuration :

Single

Surface Mount :

yes

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Pins :

3

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Vgs (Max) :

±15V

Operating Temperature :

-55°C~175°C TJ

Resistance :

26mOhm

Power Dissipation-Max :

2.4W Ta 125W Tj

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Terminations :

2

FET Type :

N-Channel

Turn-Off Delay Time :

36 ns

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

240 mJ

Continuous Drain Current (ID) :

45A

Current Rating :

45A

Voltage - Rated DC :

60V

Factory Lead Time :

2 Weeks

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Current - Continuous Drain (Id) @ 25°C :

45A Ta

Fall Time (Typ) :

158 ns

JESD-609 Code :

e3

Additional Feature :

LOGIC LEVEL COMPATIBLE

Pin Count :

3

Length :

10.29mm

Gate to Source Voltage (Vgs) :

15V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Width :

9.65mm

Drain to Source Breakdown Voltage :

60V

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

28m Ω @ 22.5A, 5V