NTB4302G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

74A

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

9.3m Ω @ 37A, 10V

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

722 mJ

Packaging :

Tube

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0093Ohm

Case Connection :

DRAIN

Pbfree Code :

No

FET Type :

N-Channel

Power Dissipation-Max :

80W Tc

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

74A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

COMMERCIAL

DS Breakdown Voltage-Min :

30V

Terminal Finish :

MATTE TIN

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

40

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

175A

Input Capacitance (Ciss) (Max) @ Vds :

2.4pF @ 24V

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Position :

Single