NTB45N06L
- Mfr.Part #
- NTB45N06L
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CHAN LL 45A 60V D2PAK
- Stock
- 1,704
- In Stock :
- 1,704
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- Manufacturer :
- onsemi
- Product Category :
- Unclassified
- Pulsed Drain Current-Max (IDM) :
- 150A
- Rds On (Max) @ Id, Vgs :
- 28m Ω @ 22.5A, 5V
- Power Dissipation :
- 125W
- Peak Reflow Temperature (Cel) :
- 260
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 5V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Terminal Finish :
- Tin (Sn)
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Avalanche Energy Rating (Eas) :
- 240 mJ
- HTS Code :
- 8541.29.00.95
- Vgs (Max) :
- ±15V
- Fall Time (Typ) :
- 158 ns
- Qualification Status :
- Not Qualified
- Rise Time :
- 341ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- Surface Mount :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 45A Ta
- Element Configuration :
- Single
- Power Dissipation-Max :
- 2.4W Ta 125W Tj
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.028Ohm
- RoHS Status :
- RoHS Compliant
- Voltage - Rated DC :
- 60V
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- Operating Temperature :
- -55°C~175°C TJ
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Transistor Application :
- SWITCHING
- Current Rating :
- 45A
- JESD-609 Code :
- e3
- Published :
- 2005
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Drain to Source Breakdown Voltage :
- 60V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1700pF @ 25V
- Continuous Drain Current (ID) :
- 45A
- Lead Free :
- Lead Free
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Gate to Source Voltage (Vgs) :
- 15V
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 36 ns
- Case Connection :
- DRAIN
- Number of Terminations :
- 2
- Datasheets
- NTB45N06L

N-Channel Tube 28m Ω @ 22.5A, 5V ±15V 1700pF @ 25V 32nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB45N06LG Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 240 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1700pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 45A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=60V. And this device has 60V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 36 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 150A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 15V.By using drive voltage (5V), this device helps reduce its overall power consumption.
NTB45N06LG Features
the avalanche energy rating (Eas) is 240 mJ
a continuous drain current (ID) of 45A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 36 ns
based on its rated peak drain current 150A.
NTB45N06LG Applications
There are a lot of ON Semiconductor
NTB45N06LG applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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