NSVMUN5236T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Transistor Type :

NPN - Pre-Biased

Transistor Application :

SWITCHING

Max Collector Current :

100mA

Number of Pins :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

SC-70, SOT-323

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Terminal Finish :

Tin (Sn)

Factory Lead Time :

4 Weeks

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

hFE Min :

80

Resistor - Emitter Base (R2) :

100 k Ω

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Collector Emitter Breakdown Voltage :

50V

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Published :

2013

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

250mV

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

500nA

Reference Standard :

AEC-Q101

Max Power Dissipation :

202mW

Surface Mount :

yes

Resistor - Base (R1) :

100 k Ω

Power - Max :

202mW

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Polarity :

NPN

Lead Free :

Lead Free

Pin Count :

3

Terminal Position :

Dual