NSVMUN5131T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Mounting Type :

Surface Mount

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Max Power Dissipation :

202mW

Published :

2013

Number of Pins :

3

Configuration :

SINGLE WITH BUILT-IN RESISTOR

JESD-609 Code :

e3

Surface Mount :

yes

Halogen Free :

Halogen Free

Resistor - Base (R1) :

2.2 k Ω

Transistor Type :

PNP - Pre-Biased

Pin Count :

3

Lead Free :

Lead Free

Reference Standard :

AEC-Q101

Package / Case :

SC-70, SOT-323

Resistor - Emitter Base (R2) :

2.2 k Ω

Polarity :

PNP

Current - Collector Cutoff (Max) :

500nA

Transistor Element Material :

SILICON

Max Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

202mW

Terminal Form :

Gull wing

Number of Terminations :

3

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

250mV

Number of Elements :

1

Factory Lead Time :

4 Weeks

hFE Min :

8

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

8 @ 5mA 10V

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)