NSVMUN2212T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Base Part Number :

MUN2212

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Number of Elements :

1

Current - Collector Cutoff (Max) :

500nA

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

50V

Radiation Hardening :

No

Transistor Type :

NPN - Pre-Biased

Resistor - Base (R1) :

22 k Ω

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

50V

Transistor Application :

SWITCHING

Surface Mount :

yes

Pin Count :

3

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Lead Free :

Lead Free

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

100mA

Published :

2013

Max Operating Temperature :

150°C

Resistor - Emitter Base (R2) :

22 k Ω

Number of Pins :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

hFE Min :

60

Element Configuration :

Single

Polarity :

NPN

Terminal Finish :

Tin (Sn)

Halogen Free :

Halogen Free

Factory Lead Time :

2 Weeks

Mounting Type :

Surface Mount

Min Operating Temperature :

-55°C

Max Power Dissipation :

230mW

JESD-609 Code :

e3