NSVMMUN2235LT1G
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- Mfr.Part #
- NSVMMUN2235LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PREBIAS NPN 50V SOT23-3
- Stock
- 3,818
- In Stock ：
- 3,818
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 5mA 10V
- Resistor - Base (R1) :
- 2.2 k Ω
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 50V
- Additional Feature :
- BUILT IN BIAS RESISTANCE RATIO IS 21
- Published :
- 2013
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Lead Free :
- Lead Free
- Resistor - Emitter Base (R2) :
- 47 k Ω
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 246mW
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 11 hours ago)
- Mount :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PDSO-G3
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 1mA, 10mA
- Configuration :
- SINGLE WITH BUILT-IN RESISTOR
- RoHS Status :
- ROHS3 Compliant
- Power - Max :
- 246mW
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 100mA
- Series :
- Automotive, AEC-Q101
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 250mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Transistor Type :
- NPN - Pre-Biased
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 500nA
- Datasheets
- NSVMMUN2235LT1G
NSVMMUN2235LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at
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