NSV60600MZ4T3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Turn On Time-Max (ton) :

280ns

Power Dissipation :

2W

Number of Elements :

1

Polarity/Channel Type :

PNP

Collector Emitter Voltage (VCEO) :

60V

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1A 2V

Halogen Free :

Halogen Free

Package / Case :

TO-261-4, TO-261AA

Terminal Position :

Dual

Collector Base Voltage (VCBO) :

100V

Max Collector Current :

6A

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Published :

2011

Transition Frequency :

100MHz

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Current - Collector (Ic) (Max) :

6A

Current - Collector Cutoff (Max) :

100nA ICBO

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

800mW

Collector Emitter Breakdown Voltage :

60V

Turn Off Time-Max (toff) :

685ns

Radiation Hardening :

No

Number of Terminations :

4

Frequency :

100MHz

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

350mV @ 600mA, 6A

Transistor Type :

PNP

Emitter Base Voltage (VEBO) :

6V

Base Part Number :

NSS60600

Case Connection :

COLLECTOR

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Factory Lead Time :

11 Weeks

Pin Count :

4

Configuration :

Single

Number of Pins :

4

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Surface Mount :

yes