NSV60201SMTWTBG

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Mfr.Part #
NSV60201SMTWTBG
Manufacturer
onsemi
Package / Case
6-WDFN Exposed Pad
Datasheet
Download
Description
TRANS NPN 60V 2A 6WDFN
Stock
3,000
In Stock :
3,000

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector (Ic) (Max) :
2A
Terminal Form :
NO LEAD
JESD-30 Code :
S-PDSO-N6
Terminal Finish :
Tin (Sn)
Current - Collector Cutoff (Max) :
100nA ICBO
Pbfree Code :
yes
Published :
2013
Vce Saturation (Max) @ Ib, Ic :
250mV @ 200mA, 2A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transition Frequency :
180MHz
Configuration :
Single
Surface Mount :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Reference Standard :
AEC-Q101
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Elements :
1
Transistor Application :
SWITCHING
JESD-609 Code :
e3
Operating Temperature :
-55°C~150°C TJ
Frequency - Transition :
180MHz
Power - Max :
1.8W
Packaging :
Tape and Reel (TR)
Voltage - Collector Emitter Breakdown (Max) :
60V
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Package / Case :
6-WDFN Exposed Pad
Factory Lead Time :
5 Weeks
Number of Terminations :
6
Transistor Type :
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce :
150 @ 100mA 2V
Case Connection :
COLLECTOR
Terminal Position :
Dual
RoHS Status :
RoHS Compliant
Mounting Type :
Surface Mount
Polarity/Channel Type :
NPN
Datasheets
NSV60201SMTWTBG
Introducing Transistors - Bipolar (BJT) - Single onsemi NSV60201SMTWTBG from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:6-WDFN Exposed Pad, Number of Terminations:6, Mounting Type:Surface Mount, NSV60201SMTWTBG pinout, NSV60201SMTWTBG datasheet PDF, NSV60201SMTWTBG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NSV60201SMTWTBG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSV60201SMTWTBG


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN 6-WDFN Exposed Pad Tape & Reel (TR) Surface Mount

NSV60201SMTWTBG Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 100mA 2V.When VCE saturation is 250mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 180MHz.The device has a 60V maximal voltage - Collector Emitter Breakdown.

NSV60201SMTWTBG Features


the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 250mV @ 200mA, 2A
a transition frequency of 180MHz


NSV60201SMTWTBG Applications


There are a lot of ON Semiconductor
NSV60201SMTWTBG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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