NSV60201LT1G
- Mfr.Part #
- NSV60201LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 2A SOT23-3
- Stock
- 25,458
- In Stock :
- 25,458
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 1A 2V
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 140mV @ 200mA, 2A
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 2A
- Mounting Type :
- Surface Mount
- Frequency :
- 100MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- hFE Min :
- 100
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 8 Weeks
- Published :
- 2016
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 540mW
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 60V
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Surface Mount :
- yes
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 8V
- Number of Pins :
- 3
- Transition Frequency :
- 100MHz
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 140V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Current - Collector (Ic) (Max) :
- 2A
- Number of Elements :
- 1
- Halogen Free :
- Halogen Free
- Max Power Dissipation :
- 460mW
- Datasheets
- NSV60201LT1G

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSV60201LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 140mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 8V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 2A volts.
NSV60201LT1G Features
the DC current gain for this device is 150 @ 1A 2V
the vce saturation(Max) is 140mV @ 200mA, 2A
the emitter base voltage is kept at 8V
a transition frequency of 100MHz
NSV60201LT1G Applications
There are a lot of ON Semiconductor
NSV60201LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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