NSV60201LT1G

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Mfr.Part #
NSV60201LT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 60V 2A SOT23-3
Stock
25,458
In Stock :
25,458

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
TO-236-3, SC-59, SOT-23-3
Lead Free :
Lead Free
Collector Emitter Voltage (VCEO) :
60V
DC Current Gain (hFE) (Min) @ Ic, Vce :
150 @ 1A 2V
JESD-609 Code :
e3
Vce Saturation (Max) @ Ib, Ic :
140mV @ 200mA, 2A
Packaging :
Tape and Reel (TR)
Max Collector Current :
2A
Mounting Type :
Surface Mount
Frequency :
100MHz
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
hFE Min :
100
Terminal Position :
Dual
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
8 Weeks
Published :
2016
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation :
540mW
Pbfree Code :
yes
Collector Emitter Breakdown Voltage :
60V
Terminal Form :
Gull wing
Pin Count :
3
Surface Mount :
yes
Polarity/Channel Type :
NPN
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
ECCN Code :
EAR99
Emitter Base Voltage (VEBO) :
8V
Number of Pins :
3
Transition Frequency :
100MHz
Configuration :
Single
Transistor Element Material :
SILICON
Terminal Finish :
Tin (Sn)
Operating Temperature :
-55°C~150°C TJ
Collector Base Voltage (VCBO) :
140V
Current - Collector Cutoff (Max) :
100nA ICBO
Number of Terminations :
3
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
NPN
Current - Collector (Ic) (Max) :
2A
Number of Elements :
1
Halogen Free :
Halogen Free
Max Power Dissipation :
460mW
Datasheets
NSV60201LT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi NSV60201LT1G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-236-3, SC-59, SOT-23-3, Mounting Type:Surface Mount, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, NSV60201LT1G pinout, NSV60201LT1G datasheet PDF, NSV60201LT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NSV60201LT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSV60201LT1G


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

NSV60201LT1G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 140mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 8V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 2A volts.

NSV60201LT1G Features


the DC current gain for this device is 150 @ 1A 2V
the vce saturation(Max) is 140mV @ 200mA, 2A
the emitter base voltage is kept at 8V
a transition frequency of 100MHz


NSV60201LT1G Applications


There are a lot of ON Semiconductor
NSV60201LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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