NSV60200SMTWTBG
- Mfr.Part #
- NSV60200SMTWTBG
- Manufacturer
- onsemi
- Package / Case
- 6-WDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A 6WDFN
- Stock
- 3,000
- In Stock :
- 3,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 200mA, 2A
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- JESD-609 Code :
- e3
- JESD-30 Code :
- S-PDSO-N6
- Factory Lead Time :
- 10 Weeks
- Pbfree Code :
- yes
- RoHS Status :
- RoHS Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- Single
- Mounting Type :
- Surface Mount
- Current - Collector (Ic) (Max) :
- 2A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 100mA 2V
- Transition Frequency :
- 155MHz
- Package / Case :
- 6-WDFN Exposed Pad
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- PNP
- Surface Mount :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 6
- Terminal Form :
- NO LEAD
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Frequency - Transition :
- 155MHz
- Published :
- 2013
- Terminal Position :
- Dual
- Power - Max :
- 1.8W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Reference Standard :
- AEC-Q101
- Datasheets
- NSV60200SMTWTBG

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP 6-WDFN Exposed Pad Tape & Reel (TR) Surface Mount
NSV60200SMTWTBG Overview
This device has a DC current gain of 150 @ 100mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 450mV @ 200mA, 2A means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 155MHz.Collector Emitter Breakdown occurs at 60VV - Maximum voltage.
NSV60200SMTWTBG Features
the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 450mV @ 200mA, 2A
a transition frequency of 155MHz
NSV60200SMTWTBG Applications
There are a lot of ON Semiconductor
NSV60200SMTWTBG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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