NSV60200SMTWTBG

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Mfr.Part #
NSV60200SMTWTBG
Manufacturer
onsemi
Package / Case
6-WDFN Exposed Pad
Datasheet
Download
Description
TRANS PNP 60V 2A 6WDFN
Stock
3,000
In Stock :
3,000

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Vce Saturation (Max) @ Ib, Ic :
450mV @ 200mA, 2A
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
JESD-609 Code :
e3
JESD-30 Code :
S-PDSO-N6
Factory Lead Time :
10 Weeks
Pbfree Code :
yes
RoHS Status :
RoHS Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Configuration :
Single
Mounting Type :
Surface Mount
Current - Collector (Ic) (Max) :
2A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
DC Current Gain (hFE) (Min) @ Ic, Vce :
150 @ 100mA 2V
Transition Frequency :
155MHz
Package / Case :
6-WDFN Exposed Pad
Transistor Application :
SWITCHING
Polarity/Channel Type :
PNP
Surface Mount :
yes
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
6
Terminal Form :
NO LEAD
Packaging :
Tape and Reel (TR)
Case Connection :
COLLECTOR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Voltage - Collector Emitter Breakdown (Max) :
60V
Frequency - Transition :
155MHz
Published :
2013
Terminal Position :
Dual
Power - Max :
1.8W
Current - Collector Cutoff (Max) :
100nA ICBO
Transistor Type :
PNP
Transistor Element Material :
SILICON
Terminal Finish :
Tin (Sn)
Number of Elements :
1
Reference Standard :
AEC-Q101
Datasheets
NSV60200SMTWTBG
Introducing Transistors - Bipolar (BJT) - Single onsemi NSV60200SMTWTBG from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:6-WDFN Exposed Pad, Operating Temperature:-55°C~150°C TJ, Number of Terminations:6, NSV60200SMTWTBG pinout, NSV60200SMTWTBG datasheet PDF, NSV60200SMTWTBG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NSV60200SMTWTBG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSV60200SMTWTBG


PNP -55°C~150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP 6-WDFN Exposed Pad Tape & Reel (TR) Surface Mount

NSV60200SMTWTBG Overview


This device has a DC current gain of 150 @ 100mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 450mV @ 200mA, 2A means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 155MHz.Collector Emitter Breakdown occurs at 60VV - Maximum voltage.

NSV60200SMTWTBG Features


the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 450mV @ 200mA, 2A
a transition frequency of 155MHz


NSV60200SMTWTBG Applications


There are a lot of ON Semiconductor
NSV60200SMTWTBG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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