NSV2SC5658M3T5G
- Mfr.Part #
- NSV2SC5658M3T5G
- Manufacturer
- onsemi
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A SOT723
- Stock
- 38,158
- In Stock :
- 38,158
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 50V
- Max Collector Current :
- 150mA
- Terminal Position :
- Dual
- Factory Lead Time :
- 8 Weeks
- JESD-609 Code :
- e3
- Package / Case :
- SOT-723
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Polarity/Channel Type :
- NPN
- Published :
- 2012
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- AMPLIFIER
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 180MHz
- Terminal Form :
- Flat
- Collector Base Voltage (VCBO) :
- 5V
- Max Power Dissipation :
- 260mW
- Current - Collector (Ic) (Max) :
- 150mA
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 400mV
- Transition Frequency :
- 180MHz
- Reference Standard :
- AEC-Q101
- Datasheets
- NSV2SC5658M3T5G

NPN -55°C~150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-723 Tape & Reel (TR) Surface Mount
NSV2SC5658M3T5G Overview
In this device, the DC current gain is 120 @ 1mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 50mA.180MHz is present in the transition frequency.Maximum collector currents can be below 150mA volts.
NSV2SC5658M3T5G Features
the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 400mV @ 5mA, 50mA
a transition frequency of 180MHz
NSV2SC5658M3T5G Applications
There are a lot of ON Semiconductor
NSV2SC5658M3T5G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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