NSV2SA2029M3T5G
- Mfr.Part #
- NSV2SA2029M3T5G
- Manufacturer
- onsemi
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.1A SOT723
- Stock
- 26,533
- In Stock :
- 26,533
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Factory Lead Time :
- 8 Weeks
- Max Power Dissipation :
- 265mW
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 140MHz
- Transistor Application :
- AMPLIFIER
- Frequency - Transition :
- 140MHz
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Terminal Form :
- Flat
- Max Collector Current :
- 100mA
- Configuration :
- Single
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 60V
- Terminal Position :
- Dual
- Published :
- 2009
- JESD-609 Code :
- e3
- Package / Case :
- SOT-723
- Reference Standard :
- AEC-Q101
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage :
- 50V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Number of Pins :
- 3
- Power - Max :
- 265mW
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 500mV
- Current - Collector Cutoff (Max) :
- 500pA ICBO
- Datasheets
- NSV2SA2029M3T5G

PNP -55°C~150°C TJ 500pA ICBO 1 Elements 3 Terminations SILICON PNP SOT-723 Tape & Reel (TR) Surface Mount
NSV2SA2029M3T5G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 1mA 6V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 5mA, 50mA.Parts of this part have transition frequencies of 140MHz.During maximum operation, collector current can be as low as 100mA volts.
NSV2SA2029M3T5G Features
the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 500mV @ 5mA, 50mA
a transition frequency of 140MHz
NSV2SA2029M3T5G Applications
There are a lot of ON Semiconductor
NSV2SA2029M3T5G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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