NSV20200LT1G
- Mfr.Part #
- NSV20200LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 20V 2A SOT23-3
- Stock
- 34,837
- In Stock :
- 34,837
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 180mV
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 500mA 2V
- Collector Emitter Breakdown Voltage :
- 20V
- Power - Max :
- 460mW
- Terminal Form :
- Gull wing
- Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 8 Weeks
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Published :
- 2011
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 100MHz
- Number of Terminations :
- 3
- Surface Mount :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Halogen Free :
- Halogen Free
- Base Part Number :
- NSS20200
- Max Collector Current :
- 2A
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Reference Standard :
- AEC-Q101
- Vce Saturation (Max) @ Ib, Ic :
- 180mV @ 200mA, 2A
- Max Power Dissipation :
- 460mW
- Turn On Time-Max (ton) :
- 180ns
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- Frequency - Transition :
- 100MHz
- Collector Base Voltage (VCBO) :
- 20V
- Pin Count :
- 3
- Datasheets
- NSV20200LT1G

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSV20200LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 180mV @ 200mA, 2A.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 2A volts.
NSV20200LT1G Features
the DC current gain for this device is 250 @ 500mA 2V
the vce saturation(Max) is 180mV @ 200mA, 2A
a transition frequency of 100MHz
NSV20200LT1G Applications
There are a lot of ON Semiconductor
NSV20200LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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