NSV20201LT1G
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- Mfr.Part #
- NSV20201LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 20V 2A SOT23-3
- Stock
- 12,074
- In Stock ：
- 12,074
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Current - Collector (Ic) (Max) :
- 2A
- Transition Frequency :
- 150MHz
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 20V
- Frequency :
- 150MHz
- Surface Mount :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Factory Lead Time :
- 8 Weeks
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Halogen Free :
- Halogen Free
- Transistor Type :
- NPN
- Max Power Dissipation :
- 460mW
- Max Collector Current :
- 2A
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 20V
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 20V
- Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Published :
- 2009
- Power Dissipation :
- 540mW
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Vce Saturation (Max) @ Ib, Ic :
- 100mV @ 200mA, 2A
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- NSV20201LT1G
NPN -55°C~150°C TJ 100nA ICBO 1 Elements NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSV20201LT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 500mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 100mV @ 200mA, 2A.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 150MHz.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
NSV20201LT1G Features
the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 100mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
NSV20201LT1G Applications
There are a lot of ON Semiconductor
NSV20201LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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