NST3906F3T5G
- Mfr.Part #
- NST3906F3T5G
- Manufacturer
- onsemi
- Package / Case
- SOT-1123
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A SOT1123
- Stock
- 9,350
- In Stock :
- 9,350
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Max Breakdown Voltage :
- 40V
- REACH SVHC :
- No SVHC
- Power - Max :
- 290mW
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Base Part Number :
- NST3906
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 40V
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 250MHz
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 40V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Terminal Form :
- Flat
- Transition Frequency :
- 250MHz
- Power Dissipation :
- 347mW
- Gain Bandwidth Product :
- 250MHz
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Turn On Time-Max (ton) :
- 70ns
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 347mW
- Max Collector Current :
- 200mA
- Factory Lead Time :
- 7 Weeks
- Surface Mount :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Qualification Status :
- Not Qualified
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Lead Free :
- Lead Free
- Published :
- 2006
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Package / Case :
- SOT-1123
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- AMPLIFIER
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 40V
- Datasheets
- NST3906F3T5G

PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP SOT-1123 Tape & Reel (TR) Surface Mount
NST3906F3T5G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 1V.When VCE saturation is 400mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 250MHz.This device can take an input voltage of 40V volts before it breaks down.A maximum collector current of 200mA volts can be achieved.
NST3906F3T5G Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
NST3906F3T5G Applications
There are a lot of ON Semiconductor
NST3906F3T5G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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