NST30010MXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Collector Emitter Breakdown Voltage :

30V

Length :

1.7mm

Power Dissipation :

661mW

Frequency :

100MHz

Collector Emitter Saturation Voltage :

-600mV

Number of Elements :

2

Power - Max :

500mW

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

30V

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006

Packaging :

Tape and Reel (TR)

Gain Bandwidth Product :

100MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Element Configuration :

Dual

Lead Free :

Lead Free

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

15nA ICBO

Mounting Type :

Surface Mount

Transistor Application :

AMPLIFIER

Height :

600μm

Collector Emitter Voltage (VCEO) :

30V

Contact Plating :

Tin

Emitter Base Voltage (VEBO) :

5V

Number of Terminations :

6

Factory Lead Time :

17 Weeks

Surface Mount :

yes

Pin Count :

6

Max Breakdown Voltage :

30V

Polarity :

PNP

Transistor Type :

2 PNP (Dual) Matched Pair

Transition Frequency :

100MHz

Number of Pins :

6

Package / Case :

SOT-563, SOT-666

Max Collector Current :

100mA

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Pbfree Code :

yes

Base Part Number :

NST30010M

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Flat

Max Power Dissipation :

661mW

Width :

1.3mm