NST3904DXV6T

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Factory Lead Time :

17 Weeks

Package / Case :

SOT-563, SOT-666

Element Configuration :

Dual

Radiation Hardening :

No

Transistor Type :

2 NPN (Dual)

Max Power Dissipation :

500mW

Emitter Base Voltage (VEBO) :

6V

Transition Frequency :

300MHz

hFE Min :

40

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

AMPLIFIER

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

Lead Free :

Lead Free

Pbfree Code :

yes

ECCN Code :

EAR99

Polarity :

NPN

Number of Elements :

2

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

40V

Number of Terminations :

6

Mounting Type :

Surface Mount

Max Collector Current :

200mA

Surface Mount :

yes

Collector Emitter Saturation Voltage :

300mV

Gain Bandwidth Product :

300MHz

Terminal Form :

Flat

Current Rating :

200mA

Collector Base Voltage (VCBO) :

60V

Published :

2007

Terminal Finish :

Tin (Sn)

Max Breakdown Voltage :

40V

Transistor Element Material :

SILICON

Pin Count :

6

Turn On Time-Max (ton) :

70ns

Voltage - Rated DC :

40V

Base Part Number :

NST3904D

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

500mW

Collector Emitter Voltage (VCEO) :

40V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 50mA

Frequency :

300MHz