NST3906DP6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Base Voltage (VCBO) :

40V

REACH SVHC :

No SVHC

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

ECCN Code :

EAR99

Transition Frequency :

250MHz

Number of Pins :

6

Turn On Time-Max (ton) :

70ns

Number of Elements :

2

Base Part Number :

NST3906D

Height :

400μm

Radiation Hardening :

No

Frequency :

250MHz

Length :

1.05mm

Package / Case :

SOT-963

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Number of Terminations :

6

Power - Max :

350mW

Factory Lead Time :

2 Weeks

Transistor Type :

2 PNP (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

-400mV

Pbfree Code :

yes

Power Dissipation :

280mW

Terminal Form :

Flat

Emitter Base Voltage (VEBO) :

5V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

40V

Published :

2008

Element Configuration :

Dual

Pin Count :

6

Collector Emitter Voltage (VCEO) :

40V

Max Collector Current :

200mA

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Max Breakdown Voltage :

40V

Transistor Element Material :

SILICON

Width :

850μm

Max Power Dissipation :

280mW

Lead Free :

Lead Free

Gain Bandwidth Product :

250MHz

Polarity :

PNP

JESD-609 Code :

e3

hFE Min :

60

Turn Off Time-Max (toff) :

300ns

Transistor Application :

AMPLIFIER