NSS35200MR6T1G
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- Mfr.Part #
- NSS35200MR6T1G
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 35V 2A 6TSOP
- Stock
- 13,081
- In Stock ：
- 13,081
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 1W
- Base Part Number :
- NSS35200
- Vce Saturation (Max) @ Ib, Ic :
- 310mV @ 20mA, 2A
- Terminal Form :
- Gull wing
- Frequency :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 6
- Contact Plating :
- Tin
- Terminal Position :
- Dual
- Surface Mount :
- yes
- Number of Terminations :
- 6
- Collector Emitter Breakdown Voltage :
- 35V
- Current Rating :
- -2A
- Number of Elements :
- 1
- Voltage - Rated DC :
- -35V
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- Package / Case :
- SOT-23-6
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1.5A 1.5V
- Published :
- 2005
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- -260mV
- Transition Frequency :
- 100MHz
- Max Power Dissipation :
- 625mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 2A
- Transistor Element Material :
- SILICON
- Number of Pins :
- 6
- Factory Lead Time :
- 2 Weeks
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 35V
- Current - Collector Cutoff (Max) :
- 100nA
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- yes
- Power - Max :
- 625mW
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- 55V
- Transistor Type :
- PNP
- Operating Temperature :
- -55°C~150°C TJ
- Halogen Free :
- Halogen Free
- hFE Min :
- 100
- Max Breakdown Voltage :
- 35V
- Datasheets
- NSS35200MR6T1G
PNP -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-23-6 Tape & Reel (TR) Surface Mount
NSS35200MR6T1G Overview
This device has a DC current gain of 100 @ 1.5A 1.5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -260mV.A VCE saturation (Max) of 310mV @ 20mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 35V volts can be used.A maximum collector current of 2A volts is possible.
NSS35200MR6T1G Features
the DC current gain for this device is 100 @ 1.5A 1.5V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 310mV @ 20mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 100MHz
NSS35200MR6T1G Applications
There are a lot of ON Semiconductor
NSS35200MR6T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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