NSS30101LT1G
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- Mfr.Part #
- NSS30101LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A SOT23-3
- Stock
- 39,784
- In Stock ：
- 39,784
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- NSS30101
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- yes
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 100nA
- Published :
- 2005
- Length :
- 3.04mm
- hFE Min :
- 300
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 500mA 5V
- Halogen Free :
- Halogen Free
- JESD-609 Code :
- e3
- Height :
- 1.11mm
- Collector Base Voltage (VCBO) :
- 50V
- Terminal Position :
- Dual
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 30V
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 200mV
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 30V
- Frequency :
- 100MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Pin Count :
- 3
- Transition Frequency :
- 100MHz
- Max Breakdown Voltage :
- 30V
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 30V
- Max Power Dissipation :
- 310mW
- Width :
- 2.64mm
- Max Collector Current :
- 1A
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 100mA, 1A
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Current Rating :
- 1A
- Factory Lead Time :
- 4 Weeks
- Power Dissipation :
- 710mW
- Datasheets
- NSS30101LT1G
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSS30101LT1G Overview
This device has a DC current gain of 300 @ 500mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 200mV.A VCE saturation (Max) of 200mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 1A volts is possible.
NSS30101LT1G Features
the DC current gain for this device is 300 @ 500mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 100MHz
NSS30101LT1G Applications
There are a lot of ON Semiconductor
NSS30101LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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