NSS35200CF8T1G
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- Mfr.Part #
- NSS35200CF8T1G
- Manufacturer
- Sanyo
- Package / Case
- 8-SMD, Flat Lead
- Datasheet
- Download
- Description
- TRANS PNP 35V 2A CHIPFET
- Stock
- 13,036
- In Stock ：
- 13,036
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- Manufacturer :
- Sanyo
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 100MHz
- Package / Case :
- 8-SMD, Flat Lead
- Factory Lead Time :
- 2 Weeks
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- -300mV
- Gain Bandwidth Product :
- 100MHz
- Polarity/Channel Type :
- PNP
- hFE Min :
- 100
- Halogen Free :
- Halogen Free
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 35V
- Pbfree Code :
- yes
- Power Dissipation :
- 13.5W
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Current Rating :
- -2A
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Terminal Form :
- C BEND
- Published :
- 2006
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Max Power Dissipation :
- 635mW
- Collector Base Voltage (VCBO) :
- 55V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1.5A 2V
- Pin Count :
- 8
- Number of Pins :
- 8
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- -35V
- Number of Terminations :
- 8
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 20mA, 2A
- Max Collector Current :
- 2A
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 35V
- Max Breakdown Voltage :
- 35V
- Base Part Number :
- NSS35200
- Terminal Position :
- Dual
- Power - Max :
- 635mW
- Current - Collector Cutoff (Max) :
- 100nA
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- Datasheets
- NSS35200CF8T1G
PNP -55°C~150°C TJ 100nA 1 Elements 8 Terminations SILICON PNP 8-SMD, Flat Lead Tape & Reel (TR) Surface Mount
NSS35200CF8T1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 1.5A 2V DC current gain.As it features a collector emitter saturation voltage of -300mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 35V volts.When collector current reaches its maximum, it can reach 2A volts.
NSS35200CF8T1G Features
the DC current gain for this device is 100 @ 1.5A 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 20mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 100MHz
NSS35200CF8T1G Applications
There are a lot of ON Semiconductor
NSS35200CF8T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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