NSS30100LT1G

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Mfr.Part #
NSS30100LT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 30V 1A SOT23-3
Stock
77,910
In Stock :
77,910

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Surface Mount
Power Dissipation :
710mW
Power - Max :
310mW
Element Configuration :
Single
Collector Base Voltage (VCBO) :
50V
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Terminal Position :
Dual
Factory Lead Time :
5 Weeks
Package / Case :
TO-236-3, SC-59, SOT-23-3
Gain Bandwidth Product :
100MHz
Operating Temperature :
-55°C~150°C TJ
Base Part Number :
NSS30100
Published :
2004
Packaging :
Tape and Reel (TR)
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Saturation Voltage :
-650mV
Surface Mount :
yes
Terminal Form :
Gull wing
Lead Free :
Lead Free
Current Rating :
-1A
Vce Saturation (Max) @ Ib, Ic :
650mV @ 200mA, 2A
Transition Frequency :
100MHz
Transistor Type :
PNP
Max Breakdown Voltage :
30V
Collector Emitter Voltage (VCEO) :
30V
Current - Collector Cutoff (Max) :
100nA
Number of Terminations :
3
Voltage - Rated DC :
-30V
Emitter Base Voltage (VEBO) :
5V
RoHS Status :
ROHS3 Compliant
Halogen Free :
Halogen Free
ECCN Code :
EAR99
Transistor Application :
SWITCHING
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 500mA 2V
Polarity/Channel Type :
PNP
Max Power Dissipation :
310mW
Collector Emitter Breakdown Voltage :
30V
Peak Reflow Temperature (Cel) :
260
Radiation Hardening :
No
JESD-609 Code :
e3
Pin Count :
3
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
40
Transistor Element Material :
SILICON
Max Collector Current :
1A
hFE Min :
100
Frequency :
100MHz
Pbfree Code :
yes
Contact Plating :
Tin
Datasheets
NSS30100LT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi NSS30100LT1G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, Operating Temperature:-55°C~150°C TJ, Base Part Number:NSS30100, Number of Pins:3, Number of Terminations:3, NSS30100LT1G pinout, NSS30100LT1G datasheet PDF, NSS30100LT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NSS30100LT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSS30100LT1G


PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

NSS30100LT1G Overview


This device has a DC current gain of 100 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -650mV.A VCE saturation (Max) of 650mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 1A volts is possible.

NSS30100LT1G Features


the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 100MHz


NSS30100LT1G Applications


There are a lot of ON Semiconductor
NSS30100LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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