NSBA124EF3T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Published :

2010

Power Dissipation :

254mW

Current - Collector Cutoff (Max) :

500nA

Package / Case :

SOT-1123

Terminal Position :

Dual

Element Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Surface Mount :

yes

Pin Count :

3

Polarity :

PNP

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Lead Free :

Lead Free

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

Max Collector Current :

100mA

Number of Pins :

3

Radiation Hardening :

No

Min Operating Temperature :

-65°C

Resistor - Emitter Base (R2) :

22 k Ω

Factory Lead Time :

2 Weeks

hFE Min :

60

Number of Terminations :

3

Terminal Form :

Flat

Collector Emitter Breakdown Voltage :

50V

Base Part Number :

NSBA1*

Resistor - Base (R1) :

22 k Ω

Continuous Collector Current :

100mA

JESD-609 Code :

e3

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

254mW

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Collector Emitter Voltage (VCEO) :

50V

Transistor Type :

PNP - Pre-Biased