NSBA113EF3T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Mounting Type :

Surface Mount

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 5mA 10V

Factory Lead Time :

4 Weeks

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Max Collector Current :

100mA

Number of Terminations :

3

Resistor - Emitter Base (R2) :

1 k Ω

Pin Count :

3

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Min Operating Temperature :

-55°C

Current - Collector Cutoff (Max) :

500nA

Number of Elements :

1

Lead Free :

Lead Free

Transistor Type :

PNP - Pre-Biased

Resistor - Base (R1) :

1 k Ω

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Element Configuration :

Single

Reference Standard :

AEC-Q101

ECCN Code :

EAR99

Surface Mount :

yes

Terminal Position :

Dual

Collector Emitter Breakdown Voltage :

50V

Package / Case :

SOT-1123

Collector Emitter Voltage (VCEO) :

250mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2013

Polarity :

PNP

Max Power Dissipation :

254mW

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Transistor Application :

SWITCHING

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

150°C