NP160N055TUJ-E2-AY

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Mfr.Part #
NP160N055TUJ-E2-AY
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
Datasheet
Download
Description
TRANSISTOR
Stock
14,919
In Stock :
14,919

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements :
1
Mount :
Surface Mount
Pulsed Drain Current-Max (IDM) :
640A
Moisture Sensitivity Level (MSL) :
Vendor Undefined
Packaging :
Tape and Reel (TR)
Case Connection :
DRAIN
Terminal Form :
Gull wing
Terminal Position :
Single
HTS Code :
8541.29.00.95
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Polarity/Channel Type :
N-Channel
Min Operating Temperature :
-55°C
Pin Count :
7
Continuous Drain Current (ID) :
160A
JESD-30 Code :
R-PSSO-G6
Published :
2010
Radiation Hardening :
No
Turn On Delay Time :
40 ns
DS Breakdown Voltage-Min :
55V
Number of Pins :
7
Operating Mode :
ENHANCEMENT MODE
Configuration :
SINGLE WITH BUILT-IN DIODE
Rise Time :
20ns
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Gate to Source Voltage (Vgs) :
20V
Drain-source On Resistance-Max :
0.003Ohm
Fall Time (Typ) :
10 ns
Max Operating Temperature :
175°C
Turn-Off Delay Time :
90 ns
Transistor Application :
SWITCHING
Number of Terminations :
6
Introducing Transistors - FETs, MOSFETs - Single Intersil (Renesas Electronics Corporation) NP160N055TUJ-E2-AY from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:7, Number of Terminations:6, NP160N055TUJ-E2-AY pinout, NP160N055TUJ-E2-AY datasheet PDF, NP160N055TUJ-E2-AY amp .Beyond Transistors - FETs, MOSFETs - Single Intersil (Renesas Electronics Corporation) NP160N055TUJ-E2-AY ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



Tape & Reel (TR)

NP160N055TUJ-E2-AY Overview


The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 160A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 90 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 640A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 40 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 55V in order to maintain normal operation.

NP160N055TUJ-E2-AY Features


a continuous drain current (ID) of 160A
the turn-off delay time is 90 ns
based on its rated peak drain current 640A.


NP160N055TUJ-E2-AY Applications


There are a lot of Renesas Electronics America
NP160N055TUJ-E2-AY applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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