NP160N055TUJ-E2-AY
- Mfr.Part #
- NP160N055TUJ-E2-AY
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- Datasheet
- Download
- Description
- TRANSISTOR
- Stock
- 14,919
- In Stock :
- 14,919
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Polarity/Channel Type :
- N-Channel
- Mount :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.003Ohm
- Pin Count :
- 7
- Max Operating Temperature :
- 175°C
- HTS Code :
- 8541.29.00.95
- Published :
- 2010
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 90 ns
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Number of Terminations :
- 6
- Min Operating Temperature :
- -55°C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- DS Breakdown Voltage-Min :
- 55V
- Continuous Drain Current (ID) :
- 160A
- Fall Time (Typ) :
- 10 ns
- Turn On Delay Time :
- 40 ns
- Number of Pins :
- 7
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Pulsed Drain Current-Max (IDM) :
- 640A
- Rise Time :
- 20ns
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSSO-G6
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- Vendor Undefined
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Datasheets
- NP160N055TUJ-E2-AY
Tape & Reel (TR)
NP160N055TUJ-E2-AY Overview
The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 160A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 90 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 640A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 40 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 55V in order to maintain normal operation.
NP160N055TUJ-E2-AY Features
a continuous drain current (ID) of 160A
the turn-off delay time is 90 ns
based on its rated peak drain current 640A.
NP160N055TUJ-E2-AY Applications
There are a lot of Renesas Electronics America
NP160N055TUJ-E2-AY applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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