NP160N04TDG-E1-AY
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- Mfr.Part #
- NP160N04TDG-E1-AY
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-263-7, D2Pak (6 Leads + Tab)
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 160A TO263-7
- Stock
- 48,565
- In Stock ：
- 48,565
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Case Connection :
- DRAIN
- HTS Code :
- 8541.29.00.95
- Pin Count :
- 7
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 107 ns
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Turn On Delay Time :
- 35 ns
- DS Breakdown Voltage-Min :
- 40V
- Pulsed Drain Current-Max (IDM) :
- 640A
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Continuous Drain Current (ID) :
- 160A
- ECCN Code :
- EAR99
- Avalanche Energy Rating (Eas) :
- 372 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 15750pF @ 25V
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G6
- Current - Continuous Drain (Id) @ 25°C :
- 160A Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 1.8W Ta 220W Tc
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Published :
- 2007
- Operating Temperature :
- 175°C TJ
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 17 ns
- Mount :
- Surface Mount
- Terminal Position :
- Single
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±20V
- Drain-source On Resistance-Max :
- 0.0054Ohm
- Drain to Source Voltage (Vdss) :
- 40V
- Package / Case :
- TO-263-7, D2Pak (6 Leads + Tab)
- Terminal Finish :
- MATTE TIN
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 270nC @ 10V
- Rise Time :
- 55ns
- Rds On (Max) @ Id, Vgs :
- 2m Ω @ 80A, 10V
- Number of Terminations :
- 6
- Datasheets
- NP160N04TDG-E1-AY
N-Channel Tape & Reel (TR) 2m Ω @ 80A, 10V ±20V 15750pF @ 25V 270nC @ 10V 40V TO-263-7, D2Pak (6 Leads + Tab)
NP160N04TDG-E1-AY Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 372 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 15750pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 160A amps.It is [107 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 640A.A turn-on delay time of 35 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 40V to maintain normal operation.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
NP160N04TDG-E1-AY Features
the avalanche energy rating (Eas) is 372 mJ
a continuous drain current (ID) of 160A
the turn-off delay time is 107 ns
based on its rated peak drain current 640A.
a 40V drain to source voltage (Vdss)
NP160N04TDG-E1-AY Applications
There are a lot of Renesas Electronics America
NP160N04TDG-E1-AY applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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