NP160N04TDG-E1-AY

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Mfr.Part #
NP160N04TDG-E1-AY
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
TO-263-7, D2Pak (6 Leads + Tab)
Datasheet
Download
Description
MOSFET N-CH 40V 160A TO263-7
Stock
48,565
In Stock :
48,565

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Transistors - FETs, MOSFETs - Single
Radiation Hardening :
No
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Pulsed Drain Current-Max (IDM) :
640A
Number of Terminations :
6
Terminal Finish :
MATTE TIN
Vgs (Max) :
±20V
RoHS Status :
ROHS3 Compliant
Continuous Drain Current (ID) :
160A
JESD-609 Code :
e3
Pin Count :
7
Turn On Delay Time :
35 ns
HTS Code :
8541.29.00.95
Input Capacitance (Ciss) (Max) @ Vds :
15750pF @ 25V
Terminal Form :
Gull wing
FET Type :
N-Channel
Turn-Off Delay Time :
107 ns
ECCN Code :
EAR99
Packaging :
Tape and Reel (TR)
Gate to Source Voltage (Vgs) :
20V
Number of Elements :
1
Package / Case :
TO-263-7, D2Pak (6 Leads + Tab)
Avalanche Energy Rating (Eas) :
372 mJ
Mounting Type :
Surface Mount
DS Breakdown Voltage-Min :
40V
Terminal Position :
Single
Rds On (Max) @ Id, Vgs :
2m Ω @ 80A, 10V
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
160A Ta
Drain to Source Voltage (Vdss) :
40V
Transistor Application :
SWITCHING
Published :
2007
JESD-30 Code :
R-PSSO-G6
Rise Time :
55ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Surface Mount
Power Dissipation-Max :
1.8W Ta 220W Tc
Configuration :
SINGLE WITH BUILT-IN DIODE
Operating Temperature :
175°C TJ
Fall Time (Typ) :
17 ns
Case Connection :
DRAIN
Gate Charge (Qg) (Max) @ Vgs :
270nC @ 10V
Transistor Element Material :
SILICON
Drain-source On Resistance-Max :
0.0054Ohm
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Datasheets
NP160N04TDG-E1-AY
Introducing Transistors - FETs, MOSFETs - Single Intersil (Renesas Electronics Corporation) NP160N04TDG-E1-AY from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:6, Package / Case:TO-263-7, D2Pak (6 Leads + Tab), Mounting Type:Surface Mount, Operating Temperature:175°C TJ, NP160N04TDG-E1-AY pinout, NP160N04TDG-E1-AY datasheet PDF, NP160N04TDG-E1-AY amp .Beyond Transistors - FETs, MOSFETs - Single Intersil (Renesas Electronics Corporation) NP160N04TDG-E1-AY ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Intersil (Renesas Electronics Corporation) NP160N04TDG-E1-AY


N-Channel Tape & Reel (TR) 2m Ω @ 80A, 10V ±20V 15750pF @ 25V 270nC @ 10V 40V TO-263-7, D2Pak (6 Leads + Tab)

NP160N04TDG-E1-AY Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 372 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 15750pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 160A amps.It is [107 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 640A.A turn-on delay time of 35 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 40V to maintain normal operation.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

NP160N04TDG-E1-AY Features


the avalanche energy rating (Eas) is 372 mJ
a continuous drain current (ID) of 160A
the turn-off delay time is 107 ns
based on its rated peak drain current 640A.
a 40V drain to source voltage (Vdss)


NP160N04TDG-E1-AY Applications


There are a lot of Renesas Electronics America
NP160N04TDG-E1-AY applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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