NP160N055TUJ-E1-AY

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

10350pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

640A

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

10 ns

Mounting Type :

Surface Mount

Rise Time :

20ns

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G6

Published :

2010

Power Dissipation-Max :

1.8W Ta 250W Tc

Pin Count :

7

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

DS Breakdown Voltage-Min :

55V

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Turn On Delay Time :

40 ns

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab)

Lead Free :

Lead Free

Operating Temperature :

175°C TJ

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

3m Ω @ 80A, 10V

Continuous Drain Current (ID) :

160A

Turn-Off Delay Time :

90 ns

Transistor Element Material :

SILICON

FET Type :

N-Channel

Case Connection :

DRAIN

Number of Terminations :

6

Power Dissipation :

1.8W

Drain-source On Resistance-Max :

0.003Ohm

Drain to Source Voltage (Vdss) :

55V